905nm High-Volume Pulsed Semiconductor Laser Diodes

The QPGEW1S09H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, quad cavity chip with a 225 µm stripe width. It provides 85 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The PGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, single cavity chip with a 75 µm stripe width. It provides 6.5 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

PGEW1S09H是一种塑料封装的高效率905nm脉冲激光二极管，包括单叠，单腔芯片，具有225μm条条纹宽度。它提供23 W @ 30 A测试，具有100 ns宽脉冲，并在各种其他封装中提供。

The DPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, dual cavity chip with a 75 µm stripe width. It provides 13 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

DPGEW1S09H是塑料封装，高效率905nm脉冲激光二极管，包括单叠，双腔芯片，带有225μm条纹宽度。它提供了45 W @ 30 A用100ns宽脉冲测试，并在各种其他封装中提供。

The LTPGAU1S03 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 24 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

The LTPGAU1S09 is a metal packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 75 W @ 30 A tested with a 100 ns wide pulse, and is offered in various other packages.

The TPGEW1S03H is a plastic packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 75 µm stripe width. It provides 20 W @ 10 A tested with a 100 ns wide pulse, and is offered in various other packages.

TPGEW1S09H是一种塑料封装，高效905nm脉冲激光二极管，包括单叠，三腔芯片，具有225μm条纹宽度。它提供了70 w @ 30 a用100 ns宽脉冲测试，并在各种其他封装中提供。

TPGAD1S03H是SMD封装，高效率905nm脉冲激光二极管，包括单叠，三腔芯片，具有75μm条条纹宽度。它提供20 W @ 10 A测试，具有50 ns宽脉冲，并在各种其他封装中提供。

The TPGAD1S09H is an SMD packaged, high efficiency 905 nm pulsed laser diode, comprised of a single stack, triple cavity chip with a 225 µm stripe width. It provides 70 W @ 30 A tested with a 50 ns wide pulse, and is offered in various other packages.

QPGEW1S01.5H是一种塑料封装的高效率905nm脉冲激光二极管，包括单叠，四腔芯片，带有37.5μm条纹宽度。它提供11 W @ 5 A用100ns宽脉冲测试，并在各种其他封装中提供。

QPGEW1S03H是一种塑料封装，高效率905nm脉冲激光二极管，包括单叠，四腔芯片，具有75μm条纹宽度。它提供25 W @ 10 A测试，具有100ns宽脉冲，并在各种其他封装中提供。

LQPGAU1S03是金属包装，高效905nm脉冲激光二极管，包括单叠，三腔芯片，具有75μm条纹宽度。它提供了24个W @ 10 A用100ns宽脉冲测试，并在各种其他封装中提供。

The Excelitas “Generation 2“ pulsed semiconductor laser, emitting at 905 nm in the near IR, uses a multi-layer monolithic chip design. Its improved GaAs structure is offering 85 W pulsed peak power when driven at 30 A. The multi-layer chip design features an emitting area of (225 x 10) μm by emission of three laser lines, offering high output power in a small emitting area. The T1¾ (TO-like) plastic encapsulated package complements Excelitas’ PGA series epi-cavity lasers in hermetic metal or SMD packages and are ideally suited for high volume applications.